Gallium Oxide SBD and MOSFET Market Report: Compound Annual Growth Rate (CAGR) of 10.6% Over the Next Few Years

Gallium Oxide SBDs are Schottky Barrier Diodes based on gallium oxide semiconductor material, featuring high breakdown voltage, low reverse leakage, and high efficiency. They are widely used in power supply and power electronics applications. Gallium Oxide MOSFETs, on the other hand, are Metal Oxide Semiconductor Field Effect Transistors based on gallium oxide, offering high breakdown voltage, low on-resistance, and high-frequency performance. They are suitable for scenarios such as electric vehicles, photovoltaics, and industrial power supplies.

According to the latest “Global Gallium Oxide SBD and MOSFET Market Report 2024-2030” released by the YHResearch research team, the global market size for GaO SBDs and MOSFETs is projected to reach $90 million by 2030, with a compound annual growth rate (CAGR) of 10.6% over the coming years, demonstrating rapid growth momentum.

In terms of the global manufacturer landscape, companies like Sigetronics and Syrnatec are major producers in the GaN SBD and MOSFET sector. According to YHResearch's Top Enterprise Research Center, the top three global manufacturers held approximately 73.0% of the market share in 2024, indicating extremely high market concentration.

By product type, GaN MOSFETs currently represent the largest segment, commanding about 57.6% of the market. In terms of application, data centers are the primary demand driver, accounting for approximately 32.0% of the market, reflecting strong demand for high-efficiency power devices in data center applications.
GaN SBDs and MOSFETs
Key Drivers

The primary drivers for GaN SBDs and MOSFETs lie in their exceptionally high breakdown electric field strength and outstanding power density. These characteristics provide significant advantages in high-voltage, high-temperature, and high-frequency scenarios, effectively reducing energy losses and enhancing system efficiency. Concurrently, robust demand for high-efficiency power devices in sectors such as EV fast charging, high-voltage power supplies, data center power management, and aerospace/defense applications is accelerating the commercial adoption of GaN power devices.

Key Constraints

However, challenges such as low wafer fabrication yields, high epitaxial growth costs, relatively poor thermal conductivity, insufficient process maturity, and incomplete adaptation of packaging and testing technologies result in overall costs that remain higher than those of SiC and GaN devices. These factors constitute the primary barriers to the market development of GaN power devices.

Industry Development Opportunities

Despite these challenges, Ga₂O₃ enables mass production on large substrates exceeding 8 inches. Advances in MOCVD and HVPE epitaxial technologies will significantly reduce manufacturing costs. Coupled with the rapid growth of automotive-grade applications and the high-voltage DC transmission market, Ga₂O₃ SBDs and MOSFETs are projected to achieve breakthrough penetration in high-voltage power electronics and energy conversion within the next 5 to 10 years.

Leading Company Profile: Sigetronics

On July 22, 2024, South Korea's leading compound semiconductor company Sigetronics announced the successful development of next-generation Schottky barrier diodes (SBDs) utilizing gallium oxide (Ga₂O₃), a breakthrough material in ultra-fast switching power semiconductors. As a new-generation ultra-wide bandgap (UWB) semiconductor material, gallium oxide is currently under active research in countries including the United States and Japan. Compared to existing wide-bandgap materials like silicon carbide (SiC) and gallium nitride (GaN), Ga₂O₃ offers a wider bandgap and higher critical electric field strength, making it ideal for high-voltage, high-current, high-temperature, and high-efficiency applications. It overcomes the limitations of earlier materials—such as low breakdown voltage (VB) and high leakage current (IL)—paving new development opportunities in the power semiconductor field.